| 摘要 |
PURPOSE:To obtain a Si gate MOSIC having a small resistance and a small step difference by a method wherein after a poly Si film is selectively oxidized, a silicide of Ni, Pd or Pt is formed and an unreacted metallic film is etched from an oxide film. CONSTITUTION:As in the existing process, a Si gate MOSIC is formed and a poly Si 6 is laminated on the whole surface. A gate wiring part and a connection part with a Si substrate are masked with Si3N4 7. The whole surface except a wiring part 8 and a connection part 9 is oxidized into SiO2. Next thereto, coating is performed with Pt, Pd and Ni, etc. and a sintering is performed to form silicide 10, 11 and unreacted metal on SiO2 is removed by etching. With this constitution, since a wiring resistance is small and step differences are small, there is no anxiety that a disconnection occurs in a wiring of the 2nd layer. |
