| 摘要 |
PURPOSE:To obtain a highly-integrated diffused resistor as designed by providing an oxide-film separation range round a semiconductor resistor. CONSTITUTION:An N type diffused resistor 34 is provided on a P type substrate 32 and an SiO2 layer 36 is easily made on the side face thereof using an Si2N4 mask to prevent the leakage through a layer 34. Thereby, when S is 3mum, and the thickness of the film 36 is 8,000Angstrom , leakage current is smaller than 10mA with 50V applied. The resistor is not affected by another device made in the vicinity thereof and can be increased in integration degree. |
