| 摘要 |
PURPOSE:To form a layer having a sharp impurity distribution by growing one layer when growing in gas phase a plurality of layers having different impurity density, subsequently etching it in the III group element-containing atmosphere in the Periodic Table and then growing next layer. CONSTITUTION:HCl and H2S for feeding AsH3 and Ga are supplied as carrier gases onto a GaAs substrate, thereby growing an N type GaAs layer 1 of 1.2X10<18>cm<-3>. Then, HCl for feeding Ga and HCl are supplied at 10ml/min and 60ml/min for approx. 10 sec, thereby etching the layer 1 in 0.7mum, and AsH3 is further flowed without adding impurity, thereby growing an N type GaAs layer 2 of 1.8X10<15>cm<-3>. Thus, the impurity density distribution forms sharply in the layer, and there can be obtained a layer having preferable performance in forming an IMPATT diode or the like. |
