| 摘要 |
PURPOSE:To utilize only sound active layers and prevent the effects of defects on a photoelectric converting device by a method wherein amorphous semiconductor active layers are divided into a plurality of active layers, separated and disposed. CONSTITUTION:An N<+> layer 2 in amorphous Si and an i layer 3 are stacked on a stainless steel plate 1, and Pt films 4 are laminated in dividing shapes. Resistance in the lateral direction is high because the layers 2, 3 are thin, and sections among each region are separated electrically. Electrodes 5 consisting of two layers of Ag and Ti are formed onto the Pt films 4. When the characteristics of a photoelectric converting element 8 formed in this manner are measured by means of the electrodes 5 and the substrate 1, the existence of the defects of the layers 2, 3 is detected and the defects are removed, and each acceptable electrode 5 is connected, a device with high release voltage is obtained by means of a sound photoelectric converting element. |
