| 摘要 |
<p>PURPOSE:To connect the back of a chip perfectly, in the case a metal layer is deposited on the back surface of a semiconductor chip and it is connected to the surface of a ceramic body, by placing an Au-Ge foil in-between and heating said assembly. CONSTITUTION:An Au layer 2 with the thickness of 1,000-3,000Angstrom is deposited on the back surface of the Si chip 1, and an Au-glass sintered layer 7 wherein Au powder and glass powder are sintered is formed on the mounting part of the ceramic package 4 to which said Au layer 2 is fixed. Then, on said layer 7, is provided the Au-Ge foil 8 which contains Ge of about 7.4wt% serving the role as a solder and whose thickness is 30-50mum and the size is slightly larger than the pellet 1. The top of the foil 8 is contacted with the Au layer 2 on the back surface of the pellet 1. Then, they are heated at 350-380 deg.C, the foil 8 is melted, Au in the Au layer 2 and the sintered layer 7 are alloyed, thereby the pellet 1 and the package 4 are incorporated into one body. Even though the mounting part of the package 4 is warped in the convex shape, the treatment is performed accrodingly.</p> |
