发明名称 FORMING METHOD FOR CROSSOVER OF THICK FILM IC
摘要 PURPOSE:To perform highly reliable interlayer insulation by exposing the air bubble in a film by abrading the surface of the insulating glass film in the lower layer, then burying the hole with the upper layer glass. CONSTITUTION:The surface layer 12 is removed by abrading the surface of the first insulating glass layer 6a. Then, the upper side 8 of the air bubble 7 in the film is removed, and the bubble 7 is exposed to the surface of the layer. When the second insulating glass layer 6b is layered, the air in the bubble is exhausted and the hole is filled with the glass during the printing. If a conductor 5 is formed thereon, the short circuits or leakage is not caused between the upper conductor 5 and the lower conductor 2.
申请公布号 JPS5669853(A) 申请公布日期 1981.06.11
申请号 JP19790145416 申请日期 1979.11.12
申请人 NISSAN MOTOR 发明人 TOMINAGA TAMOTSU
分类号 H01L27/01;H01L21/70 主分类号 H01L27/01
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