Integrated circuit with drive and load transistors - incorporates diffused test zones in emitter zones, combined with collector potential contact zone

摘要

The integrated circuit incorporating a driver transistor (TT) and a Darlington or load transistor (LT) includes an extra contact zone so that high voltage tests can be carried out. One part, e.g. the load transistor can incorporate this extra contact zone which is small in proportion to the remainder. On the base zone (3) of the silicon slice are contact windows (4) and metallising (5) enclosing emitter zones (6), with emitter contacts (7) and the metallisation (8). Incorporated in the hairpin shaped emitters is diffused a test emitter zone (10). A collector potential contact zone is formed in the corner, having a contact window (14) in a metallised zone (15).