| 摘要 |
PURPOSE:To reduce the unevenness of surface and to enlarge the margin of operation of a magnetic bubble memory element when a conductive pattern is provided on a magnetic garnet film placing an insulating film between them, and a soft magnetic material pattern is to be formed on it placing laminated insulating film between them by a method wherein a hardened film of polymeric resin is used as one of the laminated insulating films. CONSTITUTION:The first insulating film of an SiO2 film 2 is adhered on the magnetic garnet film 1 being able to hold the magnetic bubble, and the conductive pattern 3 consisting of laminated film of Mo and Au is formed on it. The second insulating film of the hardened film 6 of polymeric resin is adhered on the whole surface containing the pattern 3, the whole surface is covered with the third insulating film 7 of Al2O3, etc., a permalloy film 8 is formed on the whole surface and plasma etching is performed using the mask of a resist film 9 to obtain the soft magnetic material pattern 10 consisting of the film 8. Because the unevenness of the surface is reduced by using the heat-resisting polymeric film as the second insulating film 6, so that the margin of operation of the memory element is enlarged. |
