Ion-implanted bubble memory with replicate port.

摘要

A bubble memory device made using ion implantation techniques and incorporating relicate ports, such ports not having previously been attainable in such devices. The device includes a memory loop (ML) having first (22) and second (23) legs. A replicate conductor (30) overlies both legs and is an alignment with a first location (61, 62) on each of said legs at which an attractive pole for bubbles is simultaneously periodically generated by the rotating field used with such devices. During an interval when such attractive poles are present, a current pulse is applied to the replicate conductor to generate a stable field which is effective to elongate a bubble disposed on one of the legs and to stretch it between the two first locations of the memory loop legs. The elongated bubble is thereafter split by a bubble collapsing field generated by the rotating field.