发明名称 |
Method of making V-MOS field effect transistors utilizing a two-step anisotropic etching and ion implantation |
摘要 |
A method of making V-MOS field effect transistors is disclosed wherein a masking layer is first formed over a surface of a crystalline substrate. An aperture is then formed in the masking layer to expose the surface of the substrate. An anisotropic etchant is applied to the exposed surface so that a groove having a decreasing width within increasing depth is formed. However, the etch is not allowed to go to completion with the result that a partially formed V-shaped groove is formed. Ions are accelerated through the aperture for implantation in the crystalline substrate in the lower portion of the partially formed V-shaped groove. Thereafter, an anisotropic etchant is reapplied to the partially formed V-shaped groove, and the etch is allowed to go to completion.
|
申请公布号 |
US4272302(A) |
申请公布日期 |
1981.06.09 |
申请号 |
US19790072727 |
申请日期 |
1979.09.05 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION |
发明人 |
JHABVALA, MURZBAN D. |
分类号 |
H01L21/306;H01L21/336;H01L29/08;H01L29/423;(IPC1-7):H01L21/26;H01L21/30 |
主分类号 |
H01L21/306 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|