| 摘要 |
PURPOSE:To improve the moisture resistance of a metallic electrode section, and to thin the thickness of a protective film by using an amorphous semiconductor as a final protective film on the surface of a semiconductor device and taking the wiring contact of the electrode section and the outside through the protective film. CONSTITUTION:An amorphous SiC film 12 as a semiconductor protective film is formed onto the whole surface (directly on an electrode wiring) of a power MOS transistor. The film 12 is shaped through a plasma CVD method. Consequently, the amorphous SiC film is formed to a semiconductor device, and bonding wires are attached from the upper section of the amorphous SiC film on metallic electrodes 7 and 8 and contacts among the metallic electrodes and the outside are shaped. An impurity is doped to the film 12 and the resistance value of the film is lowered, a metal is evaporated onto the film 12 and the metal is penetrated into the film through a thermal process at that time, thus improving the contact properties of the bonding wires and the film 12. Accordingly, the moisture resistance of the metallic electrode sections is enhanced, and the thickness of the protective film can be thinned. |
