| 摘要 |
PURPOSE:To improve the characteristic, by using the photoconductive material layer composed of parts (a)-(d) where Te, Se, and element As to generate a deep level are included by prescribed atom% respectively. CONSTITUTION:Part (a) consists of the Se layer containing one, at least, selected from the group of element As which generates a deep level in Te or Se, and the quantity of element Se to generate the deep level in Te or Se is 10atom% or less on the average. Part (b) contains Se, and the peak concentration of the continuous distribution of element Se which is added to Se and generates a deep level in Se is 15atom% or more. Part (c) contains Se, and the peak concentration of the continuous distribution of Te added to Se is 15atom% or more. Part (d) contains Se, and further, the Te concentration of the Se layer part is 15atom% or less on the average, and added element As is 15atom% or less also. |
