| 摘要 |
PURPOSE:To form a stable line by a method wherein SiO2 of a scribe line part is removed by means of etching by using a metal formed on an SiO2 film on an Si substrate by means of a lift off method utilizing a positive type photoresist. CONSTITUTION:An SiO film 2 is formed on an Si substrate 1 and thereupon, a pattern of a positive photoresist 3 having a same pattern of a scribe line is formed and a Nichrome layer 4 is evaporated on the whole surface and thereafter, a Nichrome layer of the scribe line is removed by means of a lift off method. Making this Nichrome layer a mask, an SiO2 layer is processed through etching to form a scribe line. With this, in comparison with a scribe line formed by taking a photoresist layer as a mask, a stable scribe line wherein no influence of pin holes exists can be formed. |
