发明名称 PLASMA ETCHING METHOD
摘要 PURPOSE:To improve reproducibility and equality of an etching volume by a method wherein a plasma polymerization material film is previously attached to an electrode surface facing to an etching material to be processed of a parallel and flat plate electrode type plasma etching system. CONSTITUTION:In order to form a plasma polymerization material film 8 on the surface of electrodes 2, 3 of a plasma etching system, a gas for formation of a plasma polymerization material in a state wherein an etching material to be processed is not placed, is introduced, and then, a high frequency voltage is applied to produce a plasma. After this film is formed, a material to be processed is introduced into the system to receive an etching. With this, reproducibility and equality of an etching volume is improved, thus, an etching smooth surface being obtained.
申请公布号 JPS5667925(A) 申请公布日期 1981.06.08
申请号 JP19790143760 申请日期 1979.11.05
申请人 NIPPON TELEGRAPH & TELEPHONE 发明人 HIRATA KAZUO;KIMIZUKA MASAKATSU
分类号 H01L21/302;H01L21/3065;(IPC1-7):01L21/302 主分类号 H01L21/302
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