| 摘要 |
<p>PURPOSE:To improve a yield by a method wherein a coating agent, a mixed solvent of a negative type photoresist and a terpene system polymer is applied onto the rear surface of a semiconductor wafer, and a chemical cutting is performed with an etching liquid. CONSTITUTION:An acid resistance ink is applied by printing through a mask onto a principal surface 2 of a silicon wafer 1 to form a coated layer 3 of a given pattern. And thereafter, a solvent in an ink is volatilized through a baking. And then, a negative type photoregist and a terpene system polymer are melted into a solvent respectively to produce a mixed coating agent and this mixed coating agent is sufficiently dripped upon the other principal surface 4 of a wafer while rotation. Next thereto, the solvent is volatilized to form a transparent film 5 and thereafter, a chemical cutting is performed by means of an etching liquid. By performing in this way, cracks and bent of a semiconductor wafer can be prevented, thus, improving a yield.</p> |
