| 摘要 |
PURPOSE:To prevent a lowering of a mechanical strength by a method wherein a film is installed to prevent an alloying between a semiconductor substrate and a metal of each layer of a semiconductor device which is installed on a semiconductor substrate and has metallizing layers of three or more layers. CONSTITUTION:Multiple metallizing layers 2 of a given pattern are formed on a silicon substrate 1 wherein a function area is formed. The multiple metallizing layer 2 consists of the most superficial layer 23 of a metal difficult to be oxidized and easily to be welded for soldering such as gold or silver, the lowest layer 21 of aluminum which performs a mutual diffusion with silicon to obtain a ohmic contact, and an intermediate layer 22 of molybdenum and nickel, etc. And on the surface of a silicon substrate near the end face A exposed of a metal of each layer of the multiple metallizing layers, an alloying prevention film 3 of SiO2 or a low melting point glass is installed to prevent the metal of the intermediate layer 22 of the uppermost surface layer 23 and silicon from alloying. |
