| 摘要 |
PURPOSE:To obtain the lateral-mode-controlled laser beam for the subject element by a method wherein a mesa section, having the top layer of P type guide layer, is formed on an N type semiconductor layer and a P type layer is provided between the semiconductor layer and a burried layer and on the guide layer in the case of the light-emitting element having the construction wherein an N type burried section is provided on the mesa section. CONSTITUTION:A liquid-phase or a vapor-phase is epitaxially grown by laminating an N type InP layer 2, an undoped InGaAsP active layer 3 and a P type guide layer 4 on an N type InP substrate 1, and a mese section 11 is formed by performing a selective etching. Then this substrate 1 is placed in a growing furnace and a thin P type InGaAsP or a P type InP layer 12 is grown on the whole surface. At this time, in order not to have growth on the side of the mesa section 11, the layer 12 is covered only on the layer 2 connecting to the bottom of the mesa section, and on the surface of the layer 4. Thus the side of the mesa section 11 is burried with an N type InGaAsP or an N type InP layer 13 by providing the layer 12, an electrode 8 which covers the layers 12 and 13 is coated on the surface, and also an electrode 9 is coated on the reverse side of the substrate 1 respectively. |
