发明名称 |
V-groove semiconductor device with buried channel stop |
摘要 |
An insulated gate field effect transistor has channel stop regions which are separated from the heavily doped drain region so that the sidewall or drain/source to channel stop capacitance is reduced. This is accomplished by a buried outdiffused channel region which also functions as the channel stop in a VMOS transistor.
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申请公布号 |
US4271423(A) |
申请公布日期 |
1981.06.02 |
申请号 |
US19790001096 |
申请日期 |
1979.01.05 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
KANG, S. DANIEL |
分类号 |
H01L29/06;H01L29/423;H01L29/78;(IPC1-7):H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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