| 摘要 |
<p>PURPOSE:To decrease the leak current between drain and source by providing a light shielding layer in such a manner that the direct fall of the incident light from a gate side to an amorphous silicon layer is prevented. CONSTITUTION:The amorphous silicon layer 12 is provided on the gate electrode 13 made of a molybdenum-tuntalum alloy (MT) and a drain electrode 15 and a source electrode 16 made of aluminum, etc., are provided thereon. The light shielding layer 11 consisting of metal such as molybdenum, black org. material and dye is disposed on the side of the gate electrode 13 opposite to the amorphous silicon layer 12 side to prevent the direct fall of the incident light from the gate side to the amorphous silicon layer 12; in addition, the flat overlap of the light shielding layer 11 and the gate electrode 13 is confined to <=3mum to constitute a thin film transistor. Since the fall of the light to the amorphous silicon layer is prevented by providing the light shielding layer, the leak current between the drain and source is decreased and the increase in the parasitic capacity by provision of the light shielding layer is lessened.</p> |
