| 摘要 |
PURPOSE:To improve the rate of production in a reduced pressure vapor phase growing method and apparatus for a semiconductor substrate by preventing the contact among each of SiF4, O2 and doping gas supplied into a reaction tube with each other until they are introduced to the vicinity of the substrate, thereby preventing the deterioration of a grown film. CONSTITUTION:When the O2 and the SiF4 are supplied to the reaction tube 8 through holes 8 and 9, respectively in confronting position of annular gaps 16 formed in a reaction suppressing unit 15, they are moved at high speed by the reducing pressure action of a pump 7 in the tube and are accelerated through the ga]s 16. Simutaneously, the respective gases isolated radially by the reaction suppressing unit 15 effectively becomes isolating and moving state. Accordingly, they are not contacted with each other until they reach the end of the unit 15, and the O2 and the SiF4 are uniformly mixed and reacted in the vicinity of the substrate 1 so that the reaction in the vicinity of the substrate becomes controllable, thereby obtaining silicate of high quality in a high production rate. When the doping gas is supplied, there can be obtained a doped oxide of high quality similarly. |
