| 摘要 |
PURPOSE:To obtain a hetero junction having preferable crystallinity by setting the difference o lattice constants between an epitaxially grown layer and a substrate at a rate higher than approx. -10sec converted in a (004) plane measurement of CuK alpha-rays at low temperature in the hetero junction on a zinc blende type Group III-V compound substrate in the Periodic Table and equalizing the composition of the epitaxially grown layer in a thickness direction. CONSTITUTION:An epitaxial crystal growth is conducted by applying pressure to a high vapor pressure element, temperature difference is provided in the melt, and the crystal growth in conducted at low temperature part retained at predetermined temperature (a vapor pressure controlling temperature difference process). According to this process lattice matching of GaAs and GaAlAsP can be executed, the composition in the respective epitaxially grown layers become constant. Particularly when GaAlAsP, GaAs, GaAlAsP and GaAs are sequentially grown on a GaAs substrate, preferable result can be obtained so that the difference of the lattice constants satisfy DELTAd/d 2.10<-5> approximately. When the crystal is grown, it is gradually cooled, thereby forming a hetero junction having extremely preferable crystallinity on the substrate. |
