发明名称 |
METHOD AND DEVICE FOR CHEMICALLY ETCHING INTEGRATED CIRCUIT BY DRY PROCESS |
摘要 |
Apparatus for dry chemical etching caused by ion bombardment of a substrate placed in a vacuum chamber. The substrate is in contact with an electrode, connected to a high frequency bias voltage source having one terminal connected to a ground of the chamber. The etchants are produced in the form of plasma by an electrical discharge maintained in the chamber containing a gas or a suitable gaseous mixture. The plasma is produced by a microwave generator and the bias voltage by means of a high frequency source. The respective amplitudes and frequencies of the two sources enable the base of a groove on an electronic circuit to be etched without erosion of the groove. |
申请公布号 |
JPS5664437(A) |
申请公布日期 |
1981.06.01 |
申请号 |
JP19800114895 |
申请日期 |
1980.08.22 |
申请人 |
ONERA (OFF NAT AEROSPATIALE) |
发明人 |
EMU JIYOZEFU TAIE |
分类号 |
H01L21/302;H01J37/32;H01L21/26;H01L21/3065;H05H1/24 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|