发明名称 SEMICONDUCTOR LASER ELEMENT AND ITS MANUFACTURE
摘要 PURPOSE:To enable outputting light with multi-wavelengths by means of one laser element by a method wherein a plurality of laser oscillating regions are formed on a light waveguide, and light from these laser oscillating regions is extracted from the light waveguide. CONSTITUTION:An N-GaAlAs layer 2, an N-GaAlAs layer 3 and an N-GaAlAs layer 4 are grown on an N type GaAs substrate 1. A P-GaAs layer 5 and a P- GaAlAs layer 6 functioning as active layers are separately formed on the layer 4, and a P-GaAlAs layer 7 and a P-GaAs layer 8 are each made up on these layers 5, 6 successively. Oscillating light at the active layers 5 or 6 can be extracted to the outside from a waveguide 3 for output by directional coupling according to such constitution. Since the layers 5, 6 consist of semiconductors having different band gaps respectively lights with different wavelengths can be oscillated, and the two layers contribute largely to the performance of the photo multiplex communications.
申请公布号 JPS5664490(A) 申请公布日期 1981.06.01
申请号 JP19790140964 申请日期 1979.10.30
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 OOSHIMA MASAAKI;AKASAKI ISAMU
分类号 H01L21/208;H01S5/00;H01S5/22;H01S5/40;H01S5/50 主分类号 H01L21/208
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