| 摘要 |
<p>A vapor growth method of forming deposition film on a plurality of substrates (4) disposed within a cylindrical reaction vessel (1) by causing flow of reaction gas under a reduced pressure through the reaction vessel (1), in which the treated surfaces of substrates (4) are inclined to the upstream side of the reaction gas flow with respect to the axis of the reaction vessel (1) and the individual substrates (4) but the most upstream side one are each shifted in position with respect to the preceding one in a direction perpendicular to the axis of the reaction vessel (1).</p> |
