| 摘要 |
PURPOSE:To make compact and inexpensive a semiconductor device by a method wherein a photoelectric conversion element having a P-N junction and an active element used to amplify the electric signal generated in the element are integrated in one and the same semiconductor substrate. CONSTITUTION:A diode 1 used as a photoelectric conversion element and amplifiers 2-6 composed of the plural number of bypoler transistors 10 are formed in one and the same semiconductor substrate 11. In other words, N<+> type buried regions 13 and 14 are formed by diffusion on the surface of a P type Si substrate 11, and an N<-> type layer 12 is grown epitaxially on the whole surface of the substrate including the above regions. The layer 12 is then reduced to layers 12a and 12b in the shape of an island each including the regions 13 and 14 using P type separating regions 15-17. Next, one layer 12b is used as a collector region where a P type base region 18 and an N type emitter region 19 located in the region 18 are formed to constitute an N-P-N transistor. On the other hand, a P type region 29 is formed by diffusion in the other layer 12a to make a diode 1. By so doing, it is possible to obtain a pickup with superior S/N sensitivity. |
