| 摘要 |
PURPOSE:To improve the adhesiveness between the semiconductor substrate and the Au layer and the reliability of a semiconductor radiation detector by coating a semiconductor substrate having high resistivity with an Au layer to be an electrode, before implanting impurity ions into the Au layer by using the ion implantation to harden the Au layer. CONSTITUTION:By using a mask 3, the surface of an Si substrate 1 having high resistivity in which a P-N junction or the like is previously provided, is coated with the vapor of Au 2 vaporized by resistor-heating or an electron beam to form an Au layer 4 to be an electrode. Then by using a mask 6 having a slightly smaller diameter than the mask 3, boron ions 5 of BF3 or phosphorus ions 5 of PF5 are implanted into the Au layer 4 to harden its surface. To prevent the production of the irradation damage to the crystal of the substrate 1, applying the ions 5 obliquely provides a more excellent result. Thus, the surface of the Au layer 4 is hardened, as well as its adhesiveness is improved by the knock-on effect of the ions. |
