发明名称 Silicon nitride and silicon oxide etchant
摘要 An etching solution for etching composite structures of silicon nitride on silicon oxide on silicon substrates which etches the silicon nitride at a rate equal to or faster than the silicon oxide which comprises concentrated aqueous hydrogen fluoride in a high boiling, organic solvent.
申请公布号 US4269654(A) 申请公布日期 1981.05.26
申请号 US19790037378 申请日期 1979.05.09
申请人 RCA CORPORATION 发明人 DECKERT, CHERYL A.;SCHNABLE, GEORGE L.
分类号 H01L21/311;(IPC1-7):H01L21/31;B44C1/22;C03C15/00;C03C25/06 主分类号 H01L21/311
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