发明名称 |
Silicon nitride and silicon oxide etchant |
摘要 |
An etching solution for etching composite structures of silicon nitride on silicon oxide on silicon substrates which etches the silicon nitride at a rate equal to or faster than the silicon oxide which comprises concentrated aqueous hydrogen fluoride in a high boiling, organic solvent.
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申请公布号 |
US4269654(A) |
申请公布日期 |
1981.05.26 |
申请号 |
US19790037378 |
申请日期 |
1979.05.09 |
申请人 |
RCA CORPORATION |
发明人 |
DECKERT, CHERYL A.;SCHNABLE, GEORGE L. |
分类号 |
H01L21/311;(IPC1-7):H01L21/31;B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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