| 摘要 |
<p>PURPOSE:To improve surge voltage resisting volume and damp-proofness by a method wherein a groove is provided between a pad portion with a bump electrode in its upper position and a protection for wiring enclosing the pad to intercept the crack of a film entending from the portion touching the pad. CONSTITUTION:An n<+> buried region 3 is formed by diffusion in a p type Si substrate 1, and an n type layer 2 is epitaxially grown on the whole surface including the region 3 in order to isolate the layer 2 in an island shape using a p<+> type diffusing region 4. Next, an n type region 5 is formed by diffusion in the island-shaped layer 2 including the region 3, and the whole surface is covered by an SiO2 film 6, and then a window is made to attach the second Al wiring film 9 touching the region 5. The first Al wiring film 8 and then an Al evaporating layer 13 are attached to the island-shaped layer 2 excluding the region 3. The whole surface of the layer 2 is coated with a wiring protective film 10, and a window 11 is made within the evaporating layer 13 to fix a pad portion 7 having a bump electrode 12 to the exposed surface of a film 6. In this constitution, a groove 14 is made in the film 10 in the position above the layer 13 near the end of the pad 7 so as to intercept the contact of the pad 7 with the film 10.</p> |
