| 摘要 |
PURPOSE:To decrease the difference in level and to uniform the thickness of a surface protective film provided on a conductive layer and SiO2 by providing a concave section on the insulating film of a semiconductor substrate wherein a conductive layer is formed in the inside of the concave section. CONSTITUTION:A diffusion layer 3 is provided on an Si substrate 1 through an SiO2 film 2. A PSG film 5 is placed on a formed surface oxide film 4 and a CVD SiO2 film 10 is stacked on the PSG film 5. Next, the film 10 is selectively opened with the width of a, b to leave the thin film 10. A window 6 with the width a' is formed in a window 7 by photoetching and a conductive film 8 is evaporated by exposing the layer 3. A negative resist 11 is placed on the film 8 to form a resist mask 11 by exposing and developing the mask 11 having windows 12 with the dimensions of a-DELTAa, b-DELTAb. The removal of etching is applied to the conductive film 8 by the mask 11 to leave an electrode 8a and a wiring layer 8b. The film thickness will be uniformed by stacking a surface protective film 9 on the conductive layer 8a, 8b and the SiO2 10 with suitable thickness. Humidity resistance and layer insulation at the time of multilayer interconnections will remarkably be improved. |
