| 摘要 |
PURPOSE:To permits a GaAs solar cell to be used under high-temperature and high- humidity conditions by forming a Ga1-XAlXAs layer having a specified Al molar fraction and being a photoactive face inside the side surface of a GaAs layer and coating all the exposed upper and side surfaces of these layers with a light-reflection preventing film. CONSTITUTION:On a N type GaAs substrate 1, a P type Ga1-XAlAs layer 4 whose Al molar fraction is more than 0.8 is grown by liquid phase epitaxy. On doing this, the P type impurities contained in the layer 4 are diffused into the substrate 1 to produce a P type GaAs layer 2 as well as a P-N junction 3 at the interface between the layer 2 and the substrate 1. Then a lattice ohmic electrode 6 is formed on the upper surface of the layer 4, and an electrode 5 on the lower surface of the substrate 1. The layer 4 is photoetched to remove only its circumferential portion so that the layer 4 is inside the side surface 2b of the layer 2. After that, all the exposed surfaces of the layer 4 and the exposed upper surface 2a of the layer 2 are coated with a light-reflection preventing film 7 of Si3N4. |
