| 摘要 |
<p>MOLECULAR-BEAM EPITAXY SYSTEM AND METHOD INCLUDING HYDROGEN TREATMENT A system and method including the use of hydrogen in the molecular beam evaporation process for epitaxy growth, such as in the formation of GaAs or GaAlAs and Sn for n-type dopant impurity. In a molecular beam epitaxy system, a hydrogen beam is introduced and directed on the substrate during the epitaxy growth such that the presence of the hydrogen influences the physico-chemical process of surface interaction and therefore the quality of the epitaxy.</p> |
