| 摘要 |
<p>PURPOSE:To form rapidly a film which is high-sensitive to near infrared rays and is very thin and has a good adhesion property for the substance, by mixing halogen compound vapor when the organic photoconductive film is formed on the substrate by plasma polymerization of organic compound vapor. CONSTITUTION:Substrare 23 consisting of quartz, CaF2 crystal, and so on is arranged in plasma polymerization reaction vessel 9, and organic compound vapor such as HC=CH, H2C=CH2, H2C=CF2, halogen compound vapor such as CH2Br2, CF4, HBr and Ar gas and so on to be made into plasma are fed to plasma generation region 13 from tank 7a, tank 7b and tank 7c respectively, and electric discharge plasma is generated by microwaves to form a photoconductive film of several hundreds Angstrom or less on substrate 23. The photosensitivity 10 times as high as the photoconductive film formed without mixing of halogen compound vapor by mixing halogen compound vapor is obtained, and polymerization reaction is promoted by this mixing. The film is formed easily even if the substrate has a complicated form.</p> |
