| 摘要 |
PURPOSE:To obtain a gentle slope on the stepped surface of the subject device without performing a heat treatment in a high temprature atmosphere by softening the phosphor-silicic acid glass layer by a method wherein a CO2 gas laser beam is irradiated on the phosphor-silicic acis glass layer formed on the semiconductor substrate surface. CONSTITUTION:A silicon oxide film 2 and a polycrystalline silicon electrode 3 are formed on a semiconductor substrate 1. Then arsenic is ion-injected using polycrystalline silicon as a mask, and an impurity diffusing region 4 is formed. Subsequently, a phosphor-silicic acid glass layer is coated. At this time, the inclination of the stepped surface of the phosphor-silicic acid glass layer indicates the value in proportion to the inclination of the preparatory formed polycrystalline silicon 3 or the oxide film 2. Then CO2 gas laser beam is irradiated on the phosphor-silicic acid glass layer, which is softened and a layer 6, having a gentle inclination in the vicinity of the stepped surface, is formed. A stepped surface with a gentle slope can be hereby obtained without exposing the semiconductor substrate in a high temperature atmosphere. |
