| 摘要 |
PURPOSE:To coexist both a PIN photodiode and a bipolar integrated circuit by growing a high specific resistance I layer on a semiconductor substrate and forming a low specific resistance region on a part of the layer by an ion implantation or diffusion or the like. CONSTITUTION:n Type buried layers 2-1, 2-2 are selectively formed on a p type Si substrate 1, a high specific resistance semiconductor layer (an I layer) 3 is thereafter grown thereon, and an n type buried layer 4-1 and an electrode pickup region 4-2 are formed on the surface of the I layer 3. Further, the second I layer 5 is grown and low specific resistance region 6 for forming a bipolar element is formed by an ion implantation or diffusion or the like. A p type layer 9 and an n<+> type layer 11 are formed in the region 6 and a bipolar element is thus formed. A p type layer 10 is formed on the residual part of the layer 5 and a PIN diode is formed. p<+> Type layers 7-1, 7-2 are formed for isolating the elements from each other. |
