| 摘要 |
PURPOSE:To increase the magnetic reluctance effect in the magnetic reluctance effect element by forming a linear crystal of the component element of the semiconductor of an intermetallic compound semiconductor thin film having a component prependicular to the control current in the thin film. CONSTITUTION:In and Sb are evaporated from an In evaporation source 16 and an Sb evaporation source 17 and are deposited on a substrate 18 made of mica or the like in a vacuum evaporating container 15. When the crystal of InSb is produced, the heating current of the In source 16 is gradually increased, the heating current of the Sb source 17 is maintained constantly, and the ratio of the incident molecular density of In to the substrate 18 is increased. Thus, In crystal is formed in the boundary of the InSb crystal thus grown, and is obliquely grown linearly with respect to the substrate 18. The linear crystal of the In has higher conductivity than the Sb crystal and larger magnetic reluctance can be thus effected. |
