| 摘要 |
PURPOSE:To reduce the radiation damage of a semiconductor device at the time of evaporation by an electron beam process by forming a silicon oxide film by a high frequency spattering using nitrogen gas on an oxide film formed on a substrate. CONSTITUTION:P type impurity boron is diffused in an N type substrate 7 to form a base region 8, and approx. 1,500Angstrom of oxide film 9 is formed by a thermal oxidation. 500Angstrom of silicon oxide film 10 is formed on the film 9 by spattering in nitrogen gas atmosphere. Then, an emitter diffusing hole 11 is formed by a photoetching process, an ASG film 12 is formed thereon, and an emitter region 13 is formed thereon by diffusion. After the film 12 is thereafter all removed, a base electrode hole 14 is formed, and an electrode 15 is formed. Since the thickness of the oxide film on the base region thus becomes the sum, 2,000Angstrom of the thickness of the films 9 and 10, the affect of the standing wave can be reduced at the step of photoetching at the time of forming the emitter diffusing hole, and the radiation damage of the semiconductor device can be alleviated at the time of evaporating by the electron beam process. |
