| 摘要 |
PURPOSE:To prevent the generation of spike on an Si substrate when Ga is made to diffuse according to the open tube method using Ga2O3 as the diffusion source in hydrogen atmosphere by a method wherein the surface concentration and the diffusion temperature are specified. CONSTITUTION:Si wafers 4 are arranged on a quartz jig 3 in a quartz tube 1, hydrogen gas 5 is used as a carrier gas and Ga is made to diffuse from Ga2O3 diffusion source 2. In this case, the surface concentration NS is made to be 6X10<17> atoms/cc or less and the diffusion temperature is made to be 1,240 deg.C or less throughout the whole diffusion process. By this way, when Ga is made to diffuse according to the open tube method, the generation of spike is prevented, and highly reliable diffusion can be performed. |
