| 摘要 |
PURPOSE:To obtain the semiconductor device having a complementary MOS transistor performed with high reliabiilty, high integration and high operating speed and the like by covering a high melting point metallic silicide film on a polycrystalline silicon film. CONSTITUTION:The polycrystalline silicon film 7 is covered on a semiconductor substrate 1 having p type and n type conductivity regions, n type and p type impurities are selectively doped on the silicon films on the p type and n type regions respectively, and a high melting point metallic silicide film 8 is convered on the silicon films. Thereafter, the films 8 and 7 are selectively etched to expose the substrate 1, gate, source and drain electrode patterns are formed thereon, reverse conductivity type impurity to the p type and n type regions are ion implanted through the opening for exposing the substrate 1 as a diffusing hole, and a shallow diffused layer is formed. The impurities thus doped into the polycrystalline silicon film of the source, drain electrode patterns are diffused through the opening to the substrate 1, and deep source and drain impurity diffused layers 10-12 are formed. |
