发明名称 |
GALLIUM NITRIDE GROWING METHOD |
摘要 |
PURPOSE:To obtain an epitaxially grown layer with satisfactory characteristics by selecting a face inclined by 0.5-4 deg. from the low index face of a substrate crystal for the face orientation of the crystal in the epitaxial growth of gallium nitride on the substrate. CONSTITUTION:The titled growing method is characterized by the selection of a face inclined by 0.5-4 deg. from the low index face of a substrate crystal for the face orientation of the crystal. When the (0001) face of an alpha-Al2O3 single crystal or hexagonal system SiC and the (111) face of spinel is used as a substrate, a face inclined by 0.5-4 deg. in the [10-10] or [11-20] direction and [110] or [100] direction, respectively is used. By growing gallium nitride using such a substrate crystal with off-angle, an epitaxial layer with satisfactory characteristics is obtd. |
申请公布号 |
JPS5659699(A) |
申请公布日期 |
1981.05.23 |
申请号 |
JP19790134552 |
申请日期 |
1979.10.17 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
OOKI YOSHIMASA;TOYODA YUKIO;KOBAYASHI ATSUYUKI |
分类号 |
C30B25/18;C30B25/20;C30B29/38;C30B29/40;H01L21/205;H01L33/16;H01L33/32 |
主分类号 |
C30B25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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