| 摘要 |
PURPOSE:To increase the gettering effect and the productivity of the subject semiconductor wafer by a method wherein the reverse side of the wafer is soaked in an abrasive solution and a uniform damaged layer is formed on the reverse side of the wafer while ultrasonic vibrations are being applied. CONSTITUTION:The wafer 2 is sticked to a wafer supporting disk 1 with the reverse side facing outside, it is soaked into an abrasive solution 5 filled in an abrasive solution vessel 4, vibrations are given by an ultrasonic vibration generator 3 and a damaged layer is formed with an excellent reproducibility on the reverse side of the wafer. As a uniform back-distortion processed layer ie formed hereby, a large quantity of wafers can be manufactured simultaneously. |
