发明名称 MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To exclude an imperfect isolation and to improve the yield by a method wherein an element isolation region around a diffusion monitor is formed in the state that the minimum width of the element isolation region contains within an IC chip is at least partially included, and the element isolation is inspected between monitors. CONSTITUTION:The thickness of the diffusion layer depends upon the surface width, when the width is narrow it will be shallow even in a same condition. Although it is judged the isolation is perfect in the broad element isolation region, the case imperfect operation will occur in the IC. Then, the isolation region is provided in the same size as the minimum element separation region in the IC chip 10 at both side of a scribe line 12, the possibility of the isolation is detected between diffusion monitors 11, 11' by a probe. If the isolation is perfect it may be regarded as the isolation in the chip is also perfect. Thus the imperfect element isolation is entirely excluded, the reliability is enhanced.
申请公布号 JPS5658242(A) 申请公布日期 1981.05.21
申请号 JP19790133849 申请日期 1979.10.17
申请人 FUJITSU LTD 发明人 HATAISHI OSAMU
分类号 H01L21/66;(IPC1-7):01L21/66 主分类号 H01L21/66
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