| 摘要 |
PURPOSE:To control the lowering of the quantity of saturation charges and suppress dispersion among picture elements by a mechanism wherein the second impurity regions are formed by the first impurity regions and self-alignment. CONSTITUTION:The first substance film 12 is formed on one conductive semiconductor substrate 10 through an insulating film 11, a photoresist film 13 is applied on the film 12, and opening sections are made up to the film 13 and photoresist patterns 131-133 are built up. The film 12 is selectively etched using the patterns 131-133 as masks, and the first substance patterns 121-123 are formed. The ions of the conductive type impurities opposite to the substrate 10 are injected from the opening sections, and impurity regions 41, 42 are made up. The patterns 121-123 are etched from flank sections using the patterns 131-133 as masks, and patterns 121'-12 3'are built up. The patterns 131-133 are removed, the ions of the same conductive type impurities as the substrate 10 are injected employing the patterns 121'-12 3'as masks, and impurity regions 61-64 are formed. The pattens 121'- 123' are removed, and a transfer electrode 14 is formed. |
