发明名称 VOLTAGE BOOSTING CIRCUIT
摘要 PURPOSE:To reduce a current loss and to obtain a duplicate voltage of high accuracy by a method wherein after one transistor is turned ON then, the other transistor is turned OFF to prevent the generation of through type current. CONSTITUTION:MOSFETs 32,34 are turned ON and a capacitor 37 is charged up to a voltage VSS of a battery 31 and then, these FETs are turned OFF, MOSFETs 33, 35 are turned ON and capacitor 38 is charged up to the sum of the battery voltage VSS and the charging voltage VSS charged at the capacitor 37. And when a voltage 2VSS is obtained from a terminal 36, at first, the FETs 32 and 34 are turned OFF, and then, FETs35, 33 are turned ON, and conversely, first, FETs 35, 33 are turned ON, and then, FETs 32, 34 are turned ON. At this time, during the turning ON of FETs 32, 33 duplication does not occur and in the same way, during the turning ON of each of FETs34, 35 , FETs33, 34 and FETs32, 35, duplication does not occur, thus, preventing a through type current from generation.
申请公布号 JPS5658775(A) 申请公布日期 1981.05.21
申请号 JP19790133775 申请日期 1979.10.17
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 KAIZUKA MASANARI
分类号 H02M3/07 主分类号 H02M3/07
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