| 摘要 |
PURPOSE:To obtain a buried wiring layer with a flat surface by covering a wiring body formed on the surface of a substrate with a flat insulation layer while unnecessary sections are removed from the wiring body and the insulation layer by nonselective etching. CONSTITUTION:An SiO2 film 2 is applied on an Si substrate 1, an Al wiring body 3 with a specified pattern is provided thereon and an SiO2 film 4 is formed on the entire surface thereof by CVD method. At this point, as the corresponding part of the film 4 swells with respect to the wiring body 3, high molecular compound such as photoresist and polymide, and a liquid glass is applied and baked until a flat insulator layer 4 is formed. Then, the assembly is placed into a parallel flat plate type reactive sputtering etching device and so etched by a gas mixture of H2 and CCl4 that the wiring body 3 is surrounded with a layer with a flat surface 4 leaving the layer 4 on the surface thereof slightly. Thereafter, the surface of the wiring body 3 is exposed by additional etching if necessary. |
