| 摘要 |
PURPOSE:To obtain an extremely steep current rise characteristic by a method wherein the thickness and the concentration of impurities of an opposite conduction type region formed between two main electrodes are selected so as to be brought to punching-through conditions under a main operation condition. CONSTITUTION:A transistor is formed by an n<+> collector region 11, a region 12 having comparatively high resistance, a p base region 13, a p<+> base extracting region 14 and an n<+> emitter region 15. The thickness and the concentration of impurities of the region 13 are selected so as to be brought to approximate punching- through or punching-through conditions under a main operation condition. Thus, virtual base resistance is realized up to the center of the region 13 from the region 14. According to such constitution, an extremely steep collector current rise is generated at a threshold collector by virtual base feedback action. |
