| 摘要 |
PURPOSE:To lessen a wafer warpage when forming a glass film by a method wherein an electrode is made on the grooved surface of a substrate with a nonelectrolytic partial plating and an electrode is made on the whole grooveless reverse side with a nonelectrolytic plating. CONSTITUTION:A P-epitaxial layer 2 is provided on an N type si substrate 1 and then a P-N junction 3 is made. A groove 4 is provided and Ni plated layers 6 and 7 are formed by providing a mask 8 and by performing a nonelectrolytic Ni plating. The mask is removed, a heat treatment is performed at the temperature of approximately 700 deg.C and a concaved curvature is obtained on the side of the laye 7 due to the residual stress of the Ni plted layer. Then, when a glass film is formed on the groove 4, a concaved curvature is obtained on the side of the layer 7 due to the contractile force generated at the time of sintering and the warpage of a wafer is corrected. Next, Ni layers 6 and 7 are made by providing a mask again and by performing a nonelectrolytic Ni plating, and the substrate is cut at the grooved section and divided into pellets. With the above constitution being accomplished, the warpage of the wafer is reduced and an yield rate and workability of the device can be improved. |
