发明名称 PICTURE ELEMENT USING SEMICONDUCTOR
摘要 PURPOSE:To obtain a small sized picture element less in power consumption, by applying a voltage between an electrode adapted closely at the back of a semiconductor laminated substrate and a semiconductor provided at the four corners of the surface, so that conductive points are formed on the semiconductor substrate and the image is converted into an electric signal. CONSTITUTION:A single electric value P type semiconductor is provided at the back of N type semiconductor 3 of a single electric value to constitute a semiconductor substrate A. Further, a P type semiconductor 2 is formed at the four corners on the surface of the N type semiconductor 3 and a minus voltage is fed. Further, an electrode 5 is closely adhered at the back of a P type semiconductor 4 and a plus voltage is applied. Further, a depression layer is formed between the semiconductors 2 and 3. Thus, the conduction point alpha formed at the center of the N type semiconductor 3 is moved with the control of a voltage applied to P type semiconductors 2a-2d and the image received is converted into an electric signal.
申请公布号 JPS5658378(A) 申请公布日期 1981.05.21
申请号 JP19790134845 申请日期 1979.10.18
申请人 KURISUTARU KOGYO YUUGENGAISHIY 发明人 SHIYOUJI IKUO
分类号 H04N5/30;H04N5/335;H04N5/357;(IPC1-7):04N5/30 主分类号 H04N5/30
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