| 摘要 |
<p>PURPOSE:To reduce the reverse recovery time of a diode to be generated equivalently by comprising a combshaped emitter region with a short-circuit structure employed for an emitter in a rear-stage transistor when front- and rear-stage transistor circuits are formed on a semiconductor substrate. CONSTITUTION:A diffusion is made into an N type semiconductor substrate 32 to form a P type common base region 33 in which an N type emitter region 34 is provided to make the front-stage transistor 31. Then, a comb-shaped N type emitter region 37 is formed by diffusion separated at a distance from the region 34, an N type region 41 having a circular plane is provided in the center thereof and covered with an SiO2 film 40 to make the rear stage transistor 36. Thereafter, a base electrode 35 is produced on the side of the transistor 31 and the regions 34 and 37 are connected with an electrode 38 while an emitter electrode 42 is provided on the region 37. A common collector electrode 43 is applied on the back of the substrate 32 for the transisors 31 and 36.</p> |
