发明名称 THERMAL HEAD
摘要 PURPOSE:To prevent the resistance value of a heating body layer and the reproducibility for a picture from fluctuate to improve the life of the head, by arranging a silicon nitride layer adjacent to an end on the heating portion side of a leading layer to be overlaid on a polycrystalline silicon thin film heating body layer. CONSTITUTION:In the silicon thin film heating body 1 comprisig the polycrystalline silicon thin film heating body layer 4 and the leading layers 51, 53 overlaid on a glaze layer 3 for accumulating heat on a base plate 2 of alumina or the like and covered with a protective film 6, the layer 7 of silicon nitride is arranged ad jacent to an end on the heating portion side of at least one of the leading layers 51, 53 and between the heating body layer 4 and the glaze layer 3 and/or between the heating body layer 4 (including the leading layers 51, 53) and the protective layer 6. The silicon nitride layer may comprise Si2N4 as well Si2N3and SiN and preferably has a thickness ranging from 500-3,000Angstrom .
申请公布号 JPS5656886(A) 申请公布日期 1981.05.19
申请号 JP19790132927 申请日期 1979.10.17
申请人 TDK ELECTRONICS CO LTD 发明人 NAGANO KATSUTO
分类号 B41J2/335 主分类号 B41J2/335
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