| 发明名称 |
Integrated gate turn-off device with lateral regenerative portion and vertical non-regenerative power portion |
| 摘要 |
A gate turn-off device is formed by the integration of a lateral SCR and a vertical power transistor operating in parallel, with the latter carrying most of the load current whereby the former may be easily turned off which in turn terminates base drive to the transistor and thus the device is turned OFF.
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| 申请公布号 |
US4268846(A) |
申请公布日期 |
1981.05.19 |
| 申请号 |
US19780972506 |
申请日期 |
1978.12.22 |
| 申请人 |
EATON CORPORATION |
发明人 |
SPELLMAN, GORDON B.;SCHUTTEN, HERMAN P.;JASKOLSKI, STANLEY V. |
| 分类号 |
H01L29/08;H01L29/744;(IPC1-7):H01L29/74 |
主分类号 |
H01L29/08 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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